Title :
Electron irradiation effects in AlGaAs/GaAs single heterojunction bipolar transistors
Author :
Sarkar, Aveek ; Subramanian, S. ; Goodnick, S.M.
Author_Institution :
Sun Microsyst., Sunnyvale, CA, USA
fDate :
11/1/2000 12:00:00 AM
Abstract :
The effects of high-energy electron irradiation on the dc characteristics of polyimide passivated AlGaAs/GaAs HBTs of different base thicknesses and different emitter sizes are investigated. The devices show gain degradation for doses greater than 1015 e/cm2. The gain degradation of the passivated devices decreases (1) with increase in the base thickness, (2) with increase in the perimeter to area ratio of the emitter, and (3) with increase in the base current. Our results suggest that the observed gain degradation due to electron irradiation is mainly caused by an increase in the emitter-base junction space charge region recombination
Keywords :
III-V semiconductors; aluminium compounds; electron beam effects; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; passivation; space-charge-limited conduction; AlGaAs-GaAs; AlGaAs/GaAs; base current; base thicknesses; dc characteristics; electron irradiation effects; emitter sizes; emitter-base junction space charge region recombination; gain degradation; perimeter to area ratio; polyimide passivation; single heterojunction bipolar transistors; Carbon dioxide; Degradation; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Molecular beam epitaxial growth; Radiation effects; Silicon; Space charge;
Journal_Title :
Electron Devices, IEEE Transactions on
