Tetrahedral-shaped recess (111)A facet channel AlGaAs/InGaAs heterojunction field-effect transistor with an InGaAs floating quantum dot gate

Author

Shima, Masashi ; Sakuma, Yoshiki ; Futatsugi, Toshiro ; Awano, Yuji ; Yokoyama, Naoki

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

47

Issue

11

fYear

2000

fDate

11/1/2000 12:00:00 AM

Firstpage

2054

Lastpage

2060

Abstract

A transistor and memory operation of a new AlGaAs/InGaAs heterojunction field-effect transistor (HFET) in a tetrahedral-shaped recess (TSR) on the (111)B GaAs substrate was investigated at a temperature up to 120 K. The TSR-FET memory has a channel on the (111)A side surfaces of the recess and a single floating quantum dot (QD) gate at the bottom. Owing to the particular shape of the TSR structure, the charge in the floating QD gate can effectively modulate the channel current. We found a clear hysteresis in the current-voltage (I-V) characteristics with an abrupt increase and decrease in the current at the subthreshold gate bias region. Random telegraph signals with a constant amplitude of about 70 nA were also observed in the memory retention characteristics. These phenomena were considered to be attributed to the current modulation by hole charging/discharging in the QD

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; semiconductor quantum dots; semiconductor storage; 4.2 to 300 K; 70 nA; AlGaAs-InGaAs; TSR-FET memory; channel current; constant amplitude; current modulation; current-voltage characteristics; floating quantum dot gate; heterojunction field-effect transistor; hole charging/discharging; memory retention characteristics; random telegraph signals; subthreshold gate bias region; tetrahedral-shaped recess (111)A facet channel; FETs; Gallium arsenide; HEMTs; Heterojunctions; Hysteresis; Indium gallium arsenide; MODFETs; Quantum dots; Shape; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.877166

Filename

877166