Analysis of lateral DMOS power devices under ESD stress conditions

Author

Mergens, Markus P J ; Wilkening, Wolfgang ; Mettler, Stephan ; Wolf, Heinrich ; Stricker, Andreas ; Fichtner, Wolfgang

Author_Institution

Robert Bosch GmbH, Germany

Volume

47

Issue

11

fYear

2000

fDate

11/1/2000 12:00:00 AM

Firstpage

2128

Lastpage

2137

Abstract

The physical mechanisms specific for 40 V LDMOS power transistors under ESD stress (gate grounded/coupled) are investigated in detail by transmission line pulse (TLP) measurements, human body model (HBM) testing, emission microscopy (EMMI) experiments, and two-dimensional (2-D) device simulations. Inhomogeneous triggering caused by device topology as well as the sustained nonhomogeneous current flow due to the unusual electrical behavior are accurately analyzed in single- and multi-finger devices

Keywords

electrostatic discharge; power MOSFET; semiconductor device measurement; semiconductor device models; 2D device simulations; 40 V; ESD stress conditions; Inhomogeneous triggering; LDMOS power transistors; emission microscopy experiments; human body model testing; lateral DMOS power devices; multi-finger devices; nonhomogeneous current flow; single-finger devices; transmission line pulse measurements; Anthropometry; Biological system modeling; Couplings; Electrostatic discharge; Power measurement; Power transistors; Power transmission lines; Pulse measurements; Stress measurement; Transmission line measurements;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.877175

Filename

877175