Title :
Analysis of lateral DMOS power devices under ESD stress conditions
Author :
Mergens, Markus P J ; Wilkening, Wolfgang ; Mettler, Stephan ; Wolf, Heinrich ; Stricker, Andreas ; Fichtner, Wolfgang
Author_Institution :
Robert Bosch GmbH, Germany
fDate :
11/1/2000 12:00:00 AM
Abstract :
The physical mechanisms specific for 40 V LDMOS power transistors under ESD stress (gate grounded/coupled) are investigated in detail by transmission line pulse (TLP) measurements, human body model (HBM) testing, emission microscopy (EMMI) experiments, and two-dimensional (2-D) device simulations. Inhomogeneous triggering caused by device topology as well as the sustained nonhomogeneous current flow due to the unusual electrical behavior are accurately analyzed in single- and multi-finger devices
Keywords :
electrostatic discharge; power MOSFET; semiconductor device measurement; semiconductor device models; 2D device simulations; 40 V; ESD stress conditions; Inhomogeneous triggering; LDMOS power transistors; emission microscopy experiments; human body model testing; lateral DMOS power devices; multi-finger devices; nonhomogeneous current flow; single-finger devices; transmission line pulse measurements; Anthropometry; Biological system modeling; Couplings; Electrostatic discharge; Power measurement; Power transistors; Power transmission lines; Pulse measurements; Stress measurement; Transmission line measurements;
Journal_Title :
Electron Devices, IEEE Transactions on
