Title :
Analysis of the degradation and breakdown of thin SiO2 films under static and dynamic tests using a two-step stress procedure
Author :
Rodríguez, Rosana ; Nafría, Montserrat ; Miranda, Enrique ; Suñé, Jordi ; Aymerich, Xavier
Author_Institution :
Dept. Enginyeria Electron., Univ. Autonoma de Barcelona, Spain
fDate :
11/1/2000 12:00:00 AM
Abstract :
A two-step stress test is used to analyze the degradation and breakdown of thin SiO2 films. The procedure directly relates the degradation of the oxide to the breakdown statistics, without the need of any assumption about the microscopic degradation mechanism. It partially overcomes the problems associated with dynamic tests and allows the direct comparison of different tests (static and dynamic). The evolution of the degradation of 8 nm thick oxides subjected to constant-voltage (CVS), constant-current (CCS), and bipolar square voltage stresses is analyzed using the two step stress method. The results are compared with those of conventional breakdown tests to show the feasibility of the procedure. Our test procedure is also used to study the degradation of 4 nm thick oxides when subjected to CCS. The obtained results suggest that the two-step stress test will also be a powerful tool to analyze the degradation of ultra-thin oxides
Keywords :
MIS devices; dielectric thin films; semiconductor device breakdown; semiconductor device testing; silicon compounds; 4 to 8 nm; MOS devices; SiO2; SiO2 thin films; bipolar square voltage stress; breakdown statistics; constant-current stress; constant-voltage stress; dynamic tests; oxide breakdown; oxide degradation; static tests; two-step stress procedure; ultra-thin oxides; Carbon capture and storage; Circuit testing; Degradation; Dielectric thin films; Electric breakdown; Electron traps; MOS devices; Microscopy; Stress; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
