Title :
Characterization of silicon carbide (SiC) epitaxial channel MOSFETs
Author :
Wagner, William E., III ; White, Marvin H.
Author_Institution :
Lucent Technol. Bell Labs., Allentown, PA, USA
fDate :
11/1/2000 12:00:00 AM
Abstract :
Silicon carbide (SiC) epitaxial channel MOSFETs have been fabricated on 6H SiC substrates with N+ epitaxial source and drain electrodes. The electrical characteristics have been modeled in sub-pinchoff, depletion and accumulation modes of operation. A buried channel mobility of 230 cm2/Vs and an accumulation-mode surface mobility of 45 cm2/Vs are extracted at room temperature under a 50% activation of channel donor impurities
Keywords :
MOSFET; carrier mobility; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 6H-SiC substrate; SiC; accumulation mode surface mobility; buried channel mobility; depletion mode; donor impurity activation; electrical characteristics; enhancement mode; silicon carbide epitaxial channel MOSFET; Annealing; CMOS technology; Electrodes; Frequency; Impurities; MOSFETs; Semiconductor process modeling; Silicon carbide; Temperature; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
