• DocumentCode
    1395256
  • Title

    Characterization of silicon carbide (SiC) epitaxial channel MOSFETs

  • Author

    Wagner, William E., III ; White, Marvin H.

  • Author_Institution
    Lucent Technol. Bell Labs., Allentown, PA, USA
  • Volume
    47
  • Issue
    11
  • fYear
    2000
  • fDate
    11/1/2000 12:00:00 AM
  • Firstpage
    2214
  • Lastpage
    2220
  • Abstract
    Silicon carbide (SiC) epitaxial channel MOSFETs have been fabricated on 6H SiC substrates with N+ epitaxial source and drain electrodes. The electrical characteristics have been modeled in sub-pinchoff, depletion and accumulation modes of operation. A buried channel mobility of 230 cm2/Vs and an accumulation-mode surface mobility of 45 cm2/Vs are extracted at room temperature under a 50% activation of channel donor impurities
  • Keywords
    MOSFET; carrier mobility; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 6H-SiC substrate; SiC; accumulation mode surface mobility; buried channel mobility; depletion mode; donor impurity activation; electrical characteristics; enhancement mode; silicon carbide epitaxial channel MOSFET; Annealing; CMOS technology; Electrodes; Frequency; Impurities; MOSFETs; Semiconductor process modeling; Silicon carbide; Temperature; Thermal conductivity;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.877186
  • Filename
    877186
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1395256