Enhancement mode metamorphic Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As HEMT on GaAs substrate with high breakdown voltage

Author

Boudrissa, M. ; Delos, E. ; Cordier, Y. ; Theron, Didier ; De Jaeger, J.C.

Author_Institution

Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´Ascq, France

Volume

21

Issue

11

fYear

2000

Firstpage

512

Lastpage

514

Abstract

This paper presents original and experimental results provided by E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As metamorphic HEMT. The devices exhibit good dc and rf performances. The 0.4 μm gate length devices have saturation current density of 355 mA/mm at +0.6 V gate-to-source voltage. The Schottky characteristic is a typical reverse gate-to-drain breakdown voltage of -16 V. It is the first time, to our knowledge, that gate current issued from impact ionization have been observed in these devices versus gate to drain extension. These results are the first reported for E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As MM-HEMTs on GaAs substrate.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; microwave field effect transistors; semiconductor device breakdown; -16 V; 0.4 mum; 0.6 V; Al/sub 0.67/In/sub 0.33/As-Ga/sub 0.66/In/sub 0.34/As; AlInAs/GaInAs enhancement mode metamorphic HEMT; GaAs; GaAs substrate; Schottky characteristic; dc performance; gate length; gate to drain extension; high breakdown voltage; impact ionization; reverse gate-to-drain breakdown voltage; rf performance; saturation current density; Charge carrier density; Current density; Gallium arsenide; HEMTs; Impact ionization; Indium phosphide; Large-scale systems; Substrates; Voltage; mHEMTs;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.877193

Filename

877193