Title :
Very high efficiency V-band power InP HEMT MMICs
Author :
Kong, W.M.T. ; Wang, Stanley C. ; Pane-Chane Chao ; Der-Wei Tu ; Kuichul Hwang ; Tang, O.S.A. ; Shih-Ming Liu ; Pin Ho ; Nichols, K. ; Heaton, J.
Author_Institution :
Microwave Electron. Group, Lockheed Martin Co., Nashua, NH, USA
Abstract :
State-of-the-art power performance of a V-band InP HEMT MMIC is reported using a slot via process for reducing source inductance and a fully selective gate recess process for uniformity and high yield. The 0.1 μm gate length, high performance InGaAs/InAlAs/InP HEMTs that were utilized in the circuit exhibited a maximum power density of 530 mW/mm, power added efficiency of 39%, and a gain of 7.1 dB. At 60 GHz, a single-stage monolithic power amplifier achieved an output power of 224 mW with a PAE of 43%. The associated gain was 7.5 dB. These results are the best combination of output power and efficiency reported for an InP device and a MMIC at V-band, and clearly demonstrates the potential of the InP HEMT technology for very high efficiency, millimeter wave power applications.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave power amplifiers; power HEMT; 0.1 mum; 224 mW; 39 percent; 43 percent; 60 GHz; 7.1 dB; 7.5 dB; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HEMTs; InP; V-band InP HEMT MMIC; fully selective gate recess process; high power performance; high yield; maximum power density; millimeter wave power applications; output power; power added efficiency; single-stage monolithic power amplifier; slot via process; source inductance; uniformity; very high efficiency; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Inductance; MMICs; Millimeter wave technology; Power amplifiers; Power generation;
Journal_Title :
Electron Device Letters, IEEE
