DocumentCode :
1395416
Title :
A Novel Measurement Method to Determine the 
– 
Characteristic of a Solar Photovoltaic C
Author :
Jeevandoss, C.R. ; Kumaravel, M. ; Kumar, V. Jagadeesh
Author_Institution :
Central Electron. Centre, Indian Inst. of Technol. Madras, Chennai, India
Volume :
60
Issue :
5
fYear :
2011
fDate :
5/1/2011 12:00:00 AM
Firstpage :
1761
Lastpage :
1767
Abstract :
A novel method for characterizing a single crystalline or poly-silicon solar photovoltaic (SPV) cell is proposed. The extraction of the parameters of an SPV cell is hindered by the presence of its leakage resistance. It is demonstrated here that in employing a negative resistance, not only the C-V characteristics but also the R-V characteristics along with the built-in potential and the doping concentration of an SPV cell are easily ascertained. The experimental results presented herein validate the proffered method.
Keywords :
solar cells; SPV cell; built in potential; doping concentration; leakage resistance; negative resistance; polysilicon solar photovoltaic cell; single crystalline solar photovoltaic cell; Capacitance; Current measurement; Doping; Electrical resistance measurement; Measurement uncertainty; Resistance; Semiconductor device measurement; $C$ $V$ $R$ $V$
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.2010.2091183
Filename :
5658148
Link To Document :
