DocumentCode
1395624
Title
Explicit approximations for the linewidth-enhancement factor in quantum-well lasers
Author
Westbrook, L.D. ; Adams, M.J.
Author_Institution
British Telecom Res. Labs., Ipswich, UK
Volume
135
Issue
3
fYear
1988
fDate
6/1/1988 12:00:00 AM
Firstpage
223
Lastpage
225
Abstract
Explicit formulas are presented for the linewidth enhancement factor in homogeneously broadened quantum-well lasers. Inspection of these formulas demonstrates clearly for the first time the dependence of the linewidth enhancement on well width, doping and photon energy. As a specific example, the authors calculate the linewidth enhancement factor for InGaAs/InP quantum wells. It is shown that the optimum strategy for minimal linewidth enhancement is to employ narrow wells, low injected carrier densities and photon energies much greater than the effective band-gap
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser theory; semiconductor junction lasers; spectral line breadth; InGaAs-InP; doping; effective band-gap; explicit formulas; homogeneously broadened quantum-well lasers; linewidth enhancement factor; low injected carrier densities; narrow wells; photon energy; semiconductors; well width;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
Filename
6862
Link To Document