Title :
Considerations on geometry design of surface-emitting laser diodes
Author_Institution :
Lab. of Electromagn. & Acoust., Gent Univ., Belgium
fDate :
6/1/1988 12:00:00 AM
Abstract :
Vertical cavity semiconductor lasers have high threshold current densities due to high mirror losses induced by the short cavity. Therefore, a thorough optimisation on material quality and device design will be required to bring these devices to the same level of reliability as is the case for conventional laser diodes. A number of aspects concerning the geometry of different types of surface-emitting lasers are discussed by considering threshold and above-threshold behaviour, amplification of spontaneous emission, and heating. The analysis is applied to GaAs-AlGaAs devices
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser theory; semiconductor junction lasers; superradiance; GaAs-AlGaAs; GaAs-AlGaAs devices; above-threshold behaviour; device design; geometry design; heating; high mirror losses; high threshold current densities; material quality; optimisation; reliability; short cavity; spontaneous emission amplification; surface-emitting laser diodes; threshold behaviour; vertical cavity semiconductor lasers;
Journal_Title :
Optoelectronics, IEE Proceedings J
