High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain

Author

Choi, Sung-Jin ; Han, Jin-Woo ; Kim, Sungho ; Moon, Dong-Il ; Jang, Moongyu ; Choi, Yang-Kyu

Author_Institution

Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

Volume

31

Issue

3

fYear

2010

fDate

3/1/2010 12:00:00 AM

Firstpage

228

Lastpage

230

Abstract

A high-performance polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Schottky-barrier (SB) source/drain (S/D) junctions is proposed. A p-channel operation on the intrinsic nickel (Ni) silicided S/D was successfully realized with the aid of a thin active layer, despite the fact that the Ni silicided material shows a high SB height (SBH) for holes. Furthermore, for n-channel operation, the dopant-segregation technique implemented on the intrinsic Ni silicide was utilized to reduce the effective SBH for electrons. The results show a higher on-current due to the lower parasitic resistance as well as superior immunity against short-channel effects, compared to the conventional poly-Si TFT composed of p-n S/D junctions.

Keywords

Schottky barriers; elemental semiconductors; nickel alloys; p-n junctions; semiconductor doping; silicon; silicon alloys; thin film transistors; Schottky-barrier source/drain junctions; conventional poly-Si TFT; dopant-segregated Schottky-barrier source/drain; dopant-segregation technique; intrinsic nickel; n-channel operation; p-channel operation; p-n S/D junctions; parasitic resistance; poly-Si thin-film transistor; polycrystalline silicon TFT; short-channel effects; silicided material; Dopant-segregated Schottky barrier (DSSB); MOSFET; Ni silicide; Schottky barrier (SB); dopant segregation (DS); high performance; thin body; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2038348

Filename

5398906