Title :
Field-emission property of ZnSe nanoarrays
Author :
Qing Su ; Lijuan Li ; Shanying Li ; Haipeng Zhao
Author_Institution :
Dept. of Chem. & Chem. Eng., Henan Univ. of Urban Constr., Pingdingshan, China
fDate :
10/1/2012 12:00:00 AM
Abstract :
ZnSe nanoarrays were synthesised via the solvothermal method. The morphology and structure characterisations reveal that the as-synthesised individual ZnSe nanoribbon has a wurtzite structure with a height of 3 m and width of 30 100 nm. The field emission properties characterisations demonstrate that ZnSe nanoarrays have good FE properties with the low-turn-on field of 4.05 V m-1 and the high-field enhancement factor of 1228.
Keywords :
II-VI semiconductors; crystal morphology; field emission; nanofabrication; nanoribbons; semiconductor growth; wide band gap semiconductors; zinc compounds; ZnSe; crystal morphology; crystal structure; field-emission property; high-field enhancement factor; low-turn-on field; nanoarrays; nanoribbon; size 3 micron; size 30 nm to 100 nm; solvothermal method; wurtzite structure;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2012.0589
