Analysis of electron leakage current in MOS capacitors by using anisotropic and isotropic mass approaches

A leakage current in a metal-oxide-semiconductor (MOS) capacitor has been calculated taking into account an in-plane-longitudinal kinetic energy coupling, which is represented by an electron phase velocity in the gate, and anisotropic and isotropic mass approaches. The leakage currents computed under these approaches were fitted to the measured data. It was found that the calculated tunnelling currents fit well to the measured ones. It was also found that the leakage currents evaluated under the isotropic mass approach are identical with that computed under the anisotropic one. Moreover, the calculated current by considering the coupling effect and isotropic mass is able to obtain leakage currents in MOS capacitors with simplicity but with appropriate results.