• DocumentCode
    1396141
  • Title

    Diamond MESFET performance improvement by layout optimisation

  • Author

    Calvani, P. ; Giovine, Ennio ; Trucchi, D.M.

  • Author_Institution
    Inst. of Inorg. Methodologies & Plasmas (IMIP), Rome, Italy
  • Volume
    48
  • Issue
    25
  • fYear
    2012
  • Firstpage
    1586
  • Lastpage
    1588
  • Abstract
    Hydrogen terminated diamond is a promising material for metal semi-conductor field effect transistor (MESFETs) fabrication and research effort is focused on diamond quality improvement. In this reported work, the focus of attention is on device layout and structure to improve RF performances, designed on the basis of diamond physical properties, taking into account the characterisation of previously fabricated devices. Significant increase of current gain cutoff frequency fT, from 3.4 to 6.7 GHz, has been obtained, while maximum oscillation frequency fMAX is raised from 10.4 to 11.8 GHz.
  • Keywords
    Schottky gate field effect transistors; circuit layout; diamond; MESFET performance improvement; device structure; diamond physical properties; diamond quality improvement; frequency 10.4 GHz to 11.8 GHz; frequency 3.4 GHz to 6.7 GHz; hydrogen terminated diamond; layout optimisation; metal semiconductor field effect transistor fabrication;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.2305
  • Filename
    6407233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1396141