Title :
High-Temperature Performance of Silicon Junctionless MOSFETs
Author :
Lee, Chi-Woo ; Borne, Adrien ; Ferain, Isabelle ; Afzalian, Aryan ; Yan, Ran ; Akhavan, Nima Dehdashti ; Razavi, Pedram ; Colinge, Jean-Pierre
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
fDate :
3/1/2010 12:00:00 AM
Abstract :
This paper investigates the temperature dependence of the main electrical parameters of junctionless (JL) silicon nanowire transistors. Direct comparison is made to silicon nanowire (trigate) MOSFETs. Variation of parameters such as threshold voltage and on-off current characteristics is analyzed. The JL silicon nanowire FET has a lager variation of threshold voltage with temperature than the standard inversion- and accumulation-mode FETs. Unlike in classical devices, the drain current of JL FETs increases when temperature is increased.
Keywords :
MOSFET; elemental semiconductors; nanowires; silicon; Si; drain current; electrical parameter; high-temperature performance; junctionless silicon nanowire transistor; on-off current characteristics; silicon junctionless MOSFET; temperature dependence; threshold voltage; Doping profiles; Electric variables; FETs; Leakage current; MOS devices; MOSFETs; Nanoscale devices; Semiconductor device doping; Silicon; Temperature dependence; Threshold voltage; High temperature; junctionless (JL) FET; multiple-gate MOSFET; silicon nanowire FET;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2039093
