• DocumentCode
    1396206
  • Title

    Lift-Off Photolithographic Top-Contact OTFTs Using a Bilayer of PVA and SU8

  • Author

    Jung, Soyoun ; Choo, Yeon Gyu ; Ji, Taeksoo

  • Author_Institution
    Samsung Mobile Display Co., Ltd., Yongin, South Korea
  • Volume
    33
  • Issue
    4
  • fYear
    2012
  • fDate
    4/1/2012 12:00:00 AM
  • Firstpage
    603
  • Lastpage
    605
  • Abstract
    A lift-off process for direct photolithographic top-contact organic thin-film transistors (TFTs) has been developed using a bilayer of polyvinyl alcohol and SU8. Top-contact pentacene TFTs fabricated by this method, with a fixed channel width of 300 μm but different channel lengths varying from 10 to 80 μm, exhibited mobility values in the range of 0.01-0.03 cm2/V·s with the average of 0.021 ± 0.007 cm2/V·s. It is expected that the adoption of SU8 with a high aspect ratio enables the easy fabrication of submicrometer channel devices, giving rise to improved carrier transport characteristics.
  • Keywords
    carrier mobility; organic semiconductors; thin film transistors; PVA; SU8; bilayer; carrier transport characteristics; lift off photolithographic top contact OTFT; mobility values; organic thin film transistors; polyvinyl alcohol; Fabrication; Logic gates; Organic thin film transistors; Pentacene; Surface treatment; Organic thin-film transistors (OTFTs); SU8; polyvinyl alcohol (PVA); top contact;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2174604
  • Filename
    6101552
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1396206