Title :
Lift-Off Photolithographic Top-Contact OTFTs Using a Bilayer of PVA and SU8
Author :
Jung, Soyoun ; Choo, Yeon Gyu ; Ji, Taeksoo
Author_Institution :
Samsung Mobile Display Co., Ltd., Yongin, South Korea
fDate :
4/1/2012 12:00:00 AM
Abstract :
A lift-off process for direct photolithographic top-contact organic thin-film transistors (TFTs) has been developed using a bilayer of polyvinyl alcohol and SU8. Top-contact pentacene TFTs fabricated by this method, with a fixed channel width of 300 μm but different channel lengths varying from 10 to 80 μm, exhibited mobility values in the range of 0.01-0.03 cm2/V·s with the average of 0.021 ± 0.007 cm2/V·s. It is expected that the adoption of SU8 with a high aspect ratio enables the easy fabrication of submicrometer channel devices, giving rise to improved carrier transport characteristics.
Keywords :
carrier mobility; organic semiconductors; thin film transistors; PVA; SU8; bilayer; carrier transport characteristics; lift off photolithographic top contact OTFT; mobility values; organic thin film transistors; polyvinyl alcohol; Fabrication; Logic gates; Organic thin film transistors; Pentacene; Surface treatment; Organic thin-film transistors (OTFTs); SU8; polyvinyl alcohol (PVA); top contact;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2174604
