DocumentCode
1396660
Title
Hardware implementation of a `wired-once´ neural net in thin-film technology on a glass substrate
Author
Busta, Heinz H. ; Ersoy, Okan K. ; Pogemiller, Jay E. ; MacKenzie, Kenneth D. ; Standley, Robert W.
Author_Institution
Amoco Technol. Co., Naperville, IL, USA
Volume
37
Issue
4
fYear
1990
fDate
4/1/1990 12:00:00 AM
Firstpage
1039
Lastpage
1045
Abstract
To prove the feasibility of implementing artificial neural networks on large inexpensive substrates, a net designed and fabricated on a glass wafer using hydrogenated-amorphous-silicon-based technology (a-Si:H) is discussed. The net functions as an autoassociative memory in which binary numbers corresponding to 28, 56, 112, and 224 are stored. Learning of the weight matrix is carried out with the associative memory algorithm using the delta rule. Phosphorus-doped microcrystalline silicon with a resistivity of 100 to 300 Ω-cm was used for the fabrication of the weight (synapse) resistors. Inverters with a beta of one were used to form negative-weight synapses, and inverters with a beta of 10 were used for the thresholding elements (neurons). The net functions surprisingly well; it filters both the learned numbers and some numbers of the form N =4k (with k an integer), and maps other random numbers to the closest one accepted, even though the experimental weight matrix is not identical to the theoretical one
Keywords
amorphous semiconductors; content-addressable storage; elemental semiconductors; hydrogen; learning systems; neural nets; semiconductor storage; semiconductor thin films; silicon; thin film circuits; 100 to 300 ohmcm; Si:P; amorphous Si:H; artificial neural networks; associative memory algorithm; autoassociative memory; binary number storage; delta rule; glass substrate; inverters; learned number filtering; negative-weight synapses; neurons; synapse resistors; thin-film technology; thresholding elements; weight matrix learning; wired once neural net; Artificial neural networks; Associative memory; Conductivity; Glass; Hardware; Inverters; Neural networks; Silicon; Substrates; Transistors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.52439
Filename
52439
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