High isolation RF MEMS contact switch in V and W-bands using two directional motions

Proposed is the concept of an RF MEMS contact switch with high isolation over 50 GHz, and experiment at work succeeds in showing its feasibility. High isolation was achieved using two directional motions, namely vertical and lateral movement of the contact part, contrary to typical MEMS switches that generally use one of two motions. Comb and parallel plate actuators enable the contact part to move in the lateral and vertical directions. The silicon on glass (SiOG) process is utilised to fabricate the silicon switch on a glass substrate. The RF characteristics are simulated and measured from 50-110 GHz to prove the high isolation capabilities in the V- and W-bands.