Title :
State-switched modelocking of two-segment quantum dot laser via self-electro-optical quantum dot absorber
Author :
Breuer, Stefan ; Elsasser, W. ; Hopkinson, Mark
Author_Institution :
Inst. of Appl. Phys., Tech. Univ. Darmstadt, Darmstadt, Germany
Abstract :
A new functionality of a quantum dot self-electro-optical absorber is demonstrated. External resistor tuning of a quantum dot absorber via the quantum-confined Stark effect in a strongly chirped broadband two-section quantum dot laser configuration allows tuning from the modelocked ground state emission at 1270 nm to the excited state emission at 1207 nm with decreasing resistance.
Keywords :
III-V semiconductors; SEEDs; excited states; gallium arsenide; ground states; indium compounds; laser mode locking; laser tuning; quantum confined Stark effect; quantum dot lasers; resistors; semiconductor quantum dots; InAs-InGaAs; chirped broadband two-section quantum dot laser; excited state emission; external resistor tuning; ground state emission; quantum-confined Stark effect; resistance; self-electrooptical quantum dot absorber; state-switched modelocking; two-segment quantum dot laser; wavelength 1270 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.3360
