Title :
First demonstration of room temperature intersubband-interband double-resonance spectroscopy of GaAs/AlGaAs quantum wells
Author :
Yang, D.D. ; Julien, F.H. ; Lourtioz, J.-M. ; Boucaud, P. ; Planel, R.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
fDate :
6/1/1990 12:00:00 AM
Abstract :
Intersubband-interband double-resonance experiments in undoped GaAs/Al/sub 0.33/Ga/sub 0.67/As multiple quantum well (MQW) structures at room temperature are discussed. The well width is 78 AA. A Ti:sapphire laser is used to pump the interband transitions, while the first intersubband transition is probed with a CO/sub 2/ laser. The intersubband absorption is found to peak at 10.6 mu m, and a 10-meV linewidth is measured. The absorption signal is also recorded at a fixed CO/sub 2/ tuning while varying the pump laser wavelength from 700 to 850 nm. A high-resolution spectrum is obtained, reflecting the steplike density of states with sharp peaks at the exciton resonances.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical double resonance; optical pumping; semiconductor quantum wells; 10 meV; 10.6 micron; 700 to 850 nm; 78 AA; Al/sub 2/O/sub 3/:Ti; CO/sub 2/ laser; GaAs-AlGaAs quantum wells; Ti:sapphire laser; absorption signal; exciton resonances; first intersubband transition; fixed CO/sub 2/ tuning; high-resolution spectrum; interband transitions; laser pumping; linewidth; multiple quantum well; pump laser wavelength; room temperature intersubband-interband double-resonance spectroscopy; sharp peaks; steplike density of states; undoped GaAs-Al/sub 0.33/Ga/sub 0.67/As; well width; Absorption; Gallium arsenide; Laser excitation; Laser transitions; Laser tuning; Pump lasers; Quantum well devices; Quantum well lasers; Temperature; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
