Noise performance of InGaAs-InP quantum-well infrared photodetectors

Author

Jelen, Christopher ; Slivken, Steven ; David, Thibaut ; Razeghi, Manijeh ; Brown, G.J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA

Volume

34

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

1124

Lastpage

1128

Abstract

Dark current noise measurements were carried out between 10 and 10 ⁴ Hz at T=80 K on two InGaAs-InP quantum-well infrared photodetectors (QWIPs) designed for 8-μm infrared (IR) detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependant gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (~7×10 ²² cm^-3·s^-1) is similar to AlGaAs-GaAs QWIPs with similar peak wavelengths, but the gain is 50× larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers

Keywords

III-V semiconductors; carrier lifetime; dark conductivity; electron traps; gallium arsenide; indium compounds; infrared detectors; noise measurement; optical noise; photodetectors; semiconductor device noise; semiconductor quantum wells; 8 mum; 80 K; AlGaAs-GaAs QWIPs; InGaAs-InP; InGaAs-InP quantum-well infrared photodetector noise; bias-dependant gain; binary InP barriers; carrier lifetime; dark current noise measurements; electron diffusion length; electron trapping probability; noise data; peak wavelengths; thermal generation rate; transport lifetime; Dark current; Electron traps; Gain measurement; Infrared detectors; Length measurement; Noise generators; Noise measurement; Photodetectors; Probability; Quantum wells;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.687853

Filename

687853