• DocumentCode
    1397388
  • Title

    Injected Charge to Recovery as a Parameter to Characterize the Breakdown Reversibility of Ultrathin HfSiON Gate Dielectric

  • Author

    Crespo-Yepes, A. ; Martin-Martinez, J. ; Rothschild, A. ; Rodríguez, R. ; Nafría, M. ; Aymerich, X.

  • Author_Institution
    Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona, Spain
  • Volume
    11
  • Issue
    1
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    126
  • Lastpage
    130
  • Abstract
    The injected charge to recovery (QR) is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high- k hafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of QR on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed.
  • Keywords
    MOSFET; hafnium compounds; high-k dielectric thin films; oxygen compounds; semiconductor device breakdown; semiconductor device reliability; silicon compounds; BD reversibility; HfSiON; MOSFET; dielectric breakdown reversibility; injected charge to recovery; stress cycles; ultrathin high-k hafnium-based gate dielectric; BD reversibility; CMOS; dielectric breakdown (BD); high-$k$; reliability; resistive switching (RS);
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2010.2098032
  • Filename
    5659900
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1397388