Title :
Injected Charge to Recovery as a Parameter to Characterize the Breakdown Reversibility of Ultrathin HfSiON Gate Dielectric
Author :
Crespo-Yepes, A. ; Martin-Martinez, J. ; Rothschild, A. ; Rodríguez, R. ; Nafría, M. ; Aymerich, X.
Author_Institution :
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona, Spain
fDate :
3/1/2011 12:00:00 AM
Abstract :
The injected charge to recovery (QR) is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high- k hafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of QR on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed.
Keywords :
MOSFET; hafnium compounds; high-k dielectric thin films; oxygen compounds; semiconductor device breakdown; semiconductor device reliability; silicon compounds; BD reversibility; HfSiON; MOSFET; dielectric breakdown reversibility; injected charge to recovery; stress cycles; ultrathin high-k hafnium-based gate dielectric; BD reversibility; CMOS; dielectric breakdown (BD); high-$k$; reliability; resistive switching (RS);
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2010.2098032
