Title :
Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory Applications
Author :
Tang, Minghua ; Xu, Xiaolei ; Ye, Zhi ; Sugiyama, Yoshihiro ; Ishiwara, Hiroshi
Abstract :
A p-channel metal-ferroelectric-insulator-silicon field-effect transistor (FET) with a 300-nm-thick SrBi2Ta2O9 (SBT) ferroelectric film and a 10-nm-thick HfTaO layer on silicon substrate was fabricated and characterized. The device shows a nearly unchanged memory window of about 0.9 V after a 2 × 1011-cycles fatigue test, an on/off current ratio of more than 107, and a field-effect mobility of approximately 42 cm2/V · s. Moreover, a drain-current on/off ratio as high as 105 was obtained with a fixed gate voltage of 2.5 V after over a 105 -s elapsed time without any obvious degradation. These results may suggest that the Pt/SBT/HfTaO/Si FET is suitable for high-performance ferroelectric memory.
Keywords :
ferroelectric devices; ferroelectric thin films; field effect transistors; hafnium compounds; random-access storage; strontium compounds; substrates; HfTaO; SrBi2Ta2O9; buffer layer; data retention characteristics; ferroelectric film; ferroelectric-gate FET; high-performance ferroelectric memory; nonvolatile memory applications; p-channel metal-ferroelectric-insulator-silicon field-effect transistor; silicon substrate; size 10 nm; size 300 nm; voltage 2.5 V; Buffer layers; FETs; Fabrication; Logic gates; Silicon; Substrates; $hbox{SrBi}_{2}hbox{Ta}_{2}hbox{O}_{9}(hbox{SBT})$; Data retention; HfTaO; ferroelectric field-effect-transistor (FeFET); memory window; metal–ferroelectric–insulator–silicon (MFIS);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2090883
