Low-Noise Amplifier at 2.45 GHz [TC Contests]

Author

Gawande, Rohit ; Bradley, Richard

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA

Volume

11

Issue

1

fYear

2010

Firstpage

122

Lastpage

126

Abstract

An LNA with 15 K noise at 2.45 GHz working at ambient temperature has been developed using the GaAs metamorphic HEMT iT8002D manufactured by GigOptix. Unfortunately, this transistor has been discontinued. We replaced iT8002D by the FHX45X, general purpose GaAs SuperHEMT manufactured by Eudyna in the same circuit. FHX45X has the same gate width of 280 um. The measured S parameters were quite similar to the original LNA. The noise was increased to about 18 K at 2.45 GHz. We feel that FHX45X can be used as a replacement for the iT8002D. Based on the results of this LNA, we are developing a wideband (0.54 GHz) LNA that will work at ambient temperatures as well as cryogenic temperatures for radio astronomy applications.

Keywords

UHF amplifiers; gallium arsenide; high electron mobility transistors; low noise amplifiers; Eudyna GaAs SuperHEMT; FHX45X; GaAs; GigOptix GaAs metamorphic HEMT iT8002D; LNA; frequency 0.5 GHz to 4 GHz; frequency 2.45 GHz; low-noise amplifier; Circuit noise; Cryogenics; Extraterrestrial measurements; Gallium arsenide; Low-noise amplifiers; Manufacturing; Scattering parameters; Temperature; Wideband; mHEMTs;

fLanguage

English

Journal_Title

Microwave Magazine, IEEE

Publisher

ieee

ISSN

1527-3342

Type

jour

DOI

10.1109/MMM.2009.935619

Filename

5399403