Title :
Characterizing residual reflections within semiconductor lasers, integrated sources, and coupling optics
Author :
Ackerman, D.A. ; Zhang, L.M. ; Ketelsen, L.J.-P. ; Johnson, J.E.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
7/1/1998 12:00:00 AM
Abstract :
We describe a method for analyzing reflections within or near semiconductor lasers and more complicated integrated sources. Through Fourier transformation of an optical spectrum from the wavevector to the length domain, reflections are analyzed for strength, round-trip path length, and current or voltage dependence. Identification of reflections from within semiconductor lasers, integrated electro-absorption modulated lasers, and from coupling optics is presented. Spatial resolution in InP of ~5 μm with over two orders of magnitude in dynamic range is demonstrated. Inverse transformation of a spatially resolved feature in a transformed reflection spectrum provides an optical spectrum due to that individual feature of sufficient resolution to study wavelength dependence, for example, of coatings and gratings
Keywords :
Fourier transform optics; III-V semiconductors; diffraction gratings; electro-optical modulation; electroabsorption; indium compounds; optical films; reflectivity; semiconductor lasers; Fourier transformation; InP; coatings; coupling optics; current dependence; dynamic range; gratings; integrated electro-absorption modulated lasers; integrated sources; optical spectrum; reflections; residual reflections; round-trip path length; semiconductor lasers; spatial resolution; spatially resolved feature; transformed reflection spectrum; voltage dependence; wavelength dependence; wavevector; Coatings; Dynamic range; Indium phosphide; Integrated optics; Optical coupling; Optical modulation; Optical reflection; Semiconductor lasers; Spatial resolution; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
