Carrier diffusion effect in tapered semiconductor-laser amplifier

Author

Lai, Jie-Wei ; Lin, Ching-Fuh

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

34

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

1247

Lastpage

1256

Abstract

This paper proposes a theoretical model to study the beam amplification and the influence of the lateral drift and diffusion on the tapered semiconductor-laser amplifier in great detail. The overall effect of the lateral drift and diffusion could be represented by an effective diffusion coefficient. The analysis, which treats the effective diffusion coefficient as a controllable parameter, shows that both the beam quality and optoelectrical property can be improved using a large effective diffusion coefficient. The analysis also indicates that the effective diffusion in the separate-confinement heterostructure layer could affect the beam quality in the quantum-well amplifiers. In addition, the thermal effect on the device performance is studied and its influence is found to be extremely significant for the high-diffusion cases

Keywords

carrier mobility; diffusion; laser beams; laser theory; quantum well lasers; semiconductor device models; semiconductor lasers; beam amplification; beam quality; carrier diffusion effect; controllable parameter; device performance; effective diffusion coefficient; high-diffusion cases; large effective diffusion coefficient; lateral diffusion; lateral drift; optoelectrical property; quantum-well amplifiers; separate-confinement heterostructure layer; tapered semiconductor-laser amplifier; thermal effect; Fluctuations; High power amplifiers; Laser beams; Optical beams; Optical distortion; Power amplifiers; Power generation; Pulse amplifiers; Semiconductor lasers; Semiconductor optical amplifiers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.687869

Filename

687869