DocumentCode :
1397532
Title :
Lower the Voltage for CMOS RFIC
Author :
Lu, Liang-Hung ; Chen, Huan-Sheng
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
11
Issue :
1
fYear :
2010
Firstpage :
70
Lastpage :
77
Abstract :
This paper discusses the new developed techniques through which the supply voltage of CMOS RFICs can be effectively reduced. Various multi-gigahertz frequencies operating at a supply voltage less than 1 V have been successfully demonstrated in this paper. Efforts have been made in the realization of fully integrated RF front-end transceivers and frequency synthesizers in a standard CMOS process for system on a chip applications.
Keywords :
CMOS integrated circuits; low-power electronics; radiofrequency integrated circuits; CMOS RFIC; circuit performance; frequency synthesizers; fully integrated RF front-end transceivers; low-voltage operation; multi-gigahertz frequencies; supply voltage; system on chip applications; CMOS process; CMOS technology; Circuit topology; Cutoff frequency; Degradation; Integrated circuit noise; Radio frequency; Radiofrequency integrated circuits; Semiconductor device noise; Voltage;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/MMM.2009.935204
Filename :
5399440
Link To Document :
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