InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate

Author

Dastjerdi, M. Hadi Tavakoli ; Sanz-Velasco, Anke ; Vukusic, Josip ; Kollberg, Erik L. ; Sadeghi, Mahdad ; Stake, Jan

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Göteborg, Sweden

Volume

32

Issue

2

fYear

2011

Firstpage

140

Lastpage

142

Abstract

We present the results of a study on epitaxial transfer of InP-based heterostructure barrier varactor (HBV) materials onto a silicon substrate employing the low-temperature plasma-activated bonding technique. The test diodes fabricated on the bonded samples exhibit symmetric electrical characteristics, over the temperature range of 25°C-165°C, and show no degradation compared to previously reported InP-based diodes. Moreover, the onset temperature for debonding, the effective barrier height extracted from the measured data, and the maximum voltage of the HBVs for a current density of 100 A/cm² were extracted to be 260°C, 0.56 eV, and 10.5 V, respectively.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; varactors; wafer bonding; InGaAs-InAlAs-AlAs; InP; Si; current density; effective barrier height; electron volt energy 0.56 eV; epitaxial transfer; heterostructure barrier varactors; low-temperature plasma-activated bonding technique; onset temperature; symmetric electrical characteristics; temperature 25 degC to 165 degC; temperature 260 degC; test diodes; voltage 10.5 V; wafer bonding; Epitaxial transfer; III–V semiconductors; integrated circuits; millimeter wave devices; wafer bonding;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2090335

Filename

5660070