Title :
Flipping the CMOS Switch
Author :
Li, Xue Jun ; Zhang, Yue Ping
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
As CMOS technology is scaled down and adopted for many RF and millimeter-wave radio systems, design of T/R switches in CMOS has received considerable attention. Many T/R switches designed in 0.5 ¿m 65 nm CMOS processes have been reported. Table 4 summarizes these T/R switches. Some of them have become great candidates for WLAN and UWB radios. However, none of them met the requirements of mobile cellular and WPAN 60-GHz radios. CMOS device innovations and novel ideas such as artificial dielectric strips and bandgap structures may provide a comprehensive solution to the challenges of design of T/R switches for mobile cellular and 60-GHz radios.
Keywords :
CMOS integrated circuits; cellular radio; field effect MIMIC; low noise amplifiers; millimetre wave power amplifiers; millimetre wave receivers; radio transmitters; semiconductor switches; CMOS transmit/receive switches; UWB radios; WLAN; artificial dielectric strips; bandgap structures; frequency 60 GHz; low noise amplifier; millimeter-wave radiofrequency systems; mobile cellular; power amplifier; size 0.5 mum; CMOS process; CMOS technology; Dielectric devices; Millimeter wave technology; Photonic band gap; Radio frequency; Strips; Switches; Technological innovation; Wireless LAN;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2009.935203
