Flipping the CMOS Switch

Author

Li, Xue Jun ; Zhang, Yue Ping

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

11

Issue

1

fYear

2010

Firstpage

86

Lastpage

96

Abstract

As CMOS technology is scaled down and adopted for many RF and millimeter-wave radio systems, design of T/R switches in CMOS has received considerable attention. Many T/R switches designed in 0.5 Â¿m 65 nm CMOS processes have been reported. Table 4 summarizes these T/R switches. Some of them have become great candidates for WLAN and UWB radios. However, none of them met the requirements of mobile cellular and WPAN 60-GHz radios. CMOS device innovations and novel ideas such as artificial dielectric strips and bandgap structures may provide a comprehensive solution to the challenges of design of T/R switches for mobile cellular and 60-GHz radios.

Keywords

CMOS integrated circuits; cellular radio; field effect MIMIC; low noise amplifiers; millimetre wave power amplifiers; millimetre wave receivers; radio transmitters; semiconductor switches; CMOS transmit/receive switches; UWB radios; WLAN; artificial dielectric strips; bandgap structures; frequency 60 GHz; low noise amplifier; millimeter-wave radiofrequency systems; mobile cellular; power amplifier; size 0.5 mum; CMOS process; CMOS technology; Dielectric devices; Millimeter wave technology; Photonic band gap; Radio frequency; Strips; Switches; Technological innovation; Wireless LAN;

fLanguage

English

Journal_Title

Microwave Magazine, IEEE

Publisher

ieee

ISSN

1527-3342

Type

jour

DOI

10.1109/MMM.2009.935203

Filename

5399464