DocumentCode :
1397693
Title :
A review of recombination mechanisms in semiconductors
Author :
Landsberg, P.T.
Volume :
106
Issue :
17
fYear :
1959
fDate :
5/1/1959 12:00:00 AM
Firstpage :
908
Lastpage :
914
Abstract :
A survey of dominant recombination mechanisms in semiconductors is given in terms of elementary physical processes. A division between avoidable and unavoidable recombination mechanisms is convenient. In the former, group recombination through crystallographic defects and impurities, in the latter, group band-band Auger recombination, can be important. The evidence for the dominance of radiative recombination is rather limited.
Keywords :
semiconductors;
fLanguage :
English
Journal_Title :
Proceedings of the IEE - Part B: Electronic and Communication Engineering
Publisher :
iet
ISSN :
0369-8890
Type :
jour
DOI :
10.1049/pi-b-2.1959.0169
Filename :
5244082
Link To Document :
بازگشت