Three-stage InP JFET amplifier for receiver optoelectronic integrated circuits

Author

Jeong, Jichai ; Vella-Coleiro, G.P. ; Kim, Sung J. ; Eng, James

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

2

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

407

Lastpage

408

Abstract

DC and AC performance of three-stage InP JFET amplifiers fabricated on semi-insulating InP using ion implantation are discussed. The amplifiers were designed to have a gain >30 and a bandwidth >350 MHz, making them suitable for use in 600-Mb/s receiver optoelectronic integrated circuits (OEICs). The amplifiers show DC gain of 43-65 calculated from amplifier transfer characteristics. From high-frequency measurements, a 3-dB bandwidth of 400 MHz and a gain of 38 have been measured from the amplifiers.<>

Keywords

III-V semiconductors; indium compounds; integrated optoelectronics; ion implantation; junction gate field effect transistors; receivers; 400 MHz; 600 Mbit/s; AC performance; DC gain; DC performance; InP; amplifier transfer characteristics; bandwidth; gain; high-frequency measurements; ion implantation; receiver optoelectronic integrated circuits; semi-insulating InP; three-stage InP JFET amplifiers; Bandwidth; Diodes; Frequency measurement; Gain measurement; Gold; Indium phosphide; JFET integrated circuits; Ohmic contacts; Performance gain; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.56601

Filename

56601