Title :
A 5-10 GHz octave-band AlGaAs/GaAs HBT-Schottky diode down-converter MMIC
Author :
Kobayashi, Kevin W. ; Kasody, Robert ; Oki, Aaron K. ; Streit, Dwight C.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
10/1/1996 12:00:00 AM
Abstract :
The authors describe an AlGaAs/GaAs heterojunction bipolar transistor (HBT) X-band down-converter monolithic microwave integrated circuit (MMIC) which integrates a double double-balanced Schottky mixer and five stages of HBT amplification to achieve greater than 30 dB conversion gain over an RF bandwidth from 5 to 10 GHz. In addition, an output IP3 as high as +15 dBm has been achieved. The Schottky diodes are constructed from the existing N$collector and N+ subcollector layers of the HBT molecular beam epitaxy (MBE) device structure. A novel HBT amplifier topology employing active feedback which provides wide bandwidth in a compact area is used for the RF, LO, and IF amplifier stages. The complete down-converter MMIC is realized in a 3.6×3.4 mm2 area, is self-biased through a 6 V supply, and consumes 530 mW. This MMIC represents the highest complexity X-band down-converter MMIC demonstrated using GaAs HBT-Schottky diode technology
Keywords :
III-V semiconductors; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; Schottky diode mixers; aluminium compounds; bipolar MMIC; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; 30 dB; 5 GHz; 5 to 10 GHz; 530 mW; 6 V; AlGaAs-GaAs; HBT amplification; HBT amplifier topology; HBT-Schottky diode down-converter MMIC; MBE device structure; X-band; active feedback; double double-balanced Schottky mixer; heterojunction bipolar transistor; monolithic microwave integrated circuit; octave-band type; self-biasing; Bandwidth; Bipolar integrated circuits; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Microwave integrated circuits; Molecular beam epitaxial growth; Radio frequency; Radiofrequency amplifiers; Schottky diodes;
Journal_Title :
Solid-State Circuits, IEEE Journal of
