Title :
Low phase noise millimeter-wave frequency sources using InP-based HBT MMIC technology
Author :
Wang, Huei ; Chang, Kwo Wei ; Tran, Liem T. ; Cowles, John C. ; Block, Thomas R. ; Lin, Eric W. ; Dow, G. Samuel ; Oki, Aaron K. ; Streit, Dwight C. ; Allen, Barry R.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
10/1/1996 12:00:00 AM
Abstract :
A family of millimeter-wave sources based on InP heterojunction bipolar transistor (HBT) monolithic microwave/millimeter-wave integrated circuit (MMIC) technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode oscillators, and a 95-GHz frequency source module using a 23.8-GHz InP HBT MMIC dielectric resonator oscillator (DRO) in conjunction with a GaAs-based high electron mobility transistor (HEMT) MMIC frequency quadrupler and W-band output amplifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices. To our knowledge, this is the first demonstration of millimeter-wave sources using InP-based HBT MMIC´s
Keywords :
III-V semiconductors; MMIC oscillators; bipolar MIMIC; dielectric resonator oscillators; indium compounds; millimetre wave oscillators; phase noise; signal sources; 23.8 to 95 GHz; DRO; HEMT frequency quadrupler; InP; InP-based HBT MIMIC technology; W-band output amplifiers; dielectric resonator oscillator; frequency source module; fundamental mode oscillators; heterojunction bipolar transistor; high electron mobility transistor; low 1/f noise; low phase noise MM-wave frequency sources; millimeter-wave frequency sources; monolithic millimeter-wave IC; Frequency; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MMICs; Microwave oscillators; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; Phase noise;
Journal_Title :
Solid-State Circuits, IEEE Journal of
