Title :
VBIC95, the vertical bipolar inter-company model
Author :
McAndrew, Colin C. ; Seitchik, Jerold A. ; Bowers, Derek F. ; Dunn, Mark ; Foisy, Mark ; Getreu, Ian ; McSwain, Marc ; Moinian, Shahriar ; Parker, James ; Roulston, David J. ; Schröter, Michael ; Van Wijnen, Paul ; Wagner, Lawrence F.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
fDate :
10/1/1996 12:00:00 AM
Abstract :
This paper details the VBIC95 bipolar junction transistor (BJT) model. The model was developed as an industry standard replacement for the SPICE Gummel-Poon (SGP) model, to improve deficiencies of the SGP model that have become apparent over time because of the advances in BJT process technology. VBIC95 is still based on the Gummel-Poon formulation, and thus can degenerate to be similar to the familiar SGP model. However, it includes improved modeling of the Early effect, quasi-saturation, substrate and oxide parasitics, avalanche multiplication, and temperature behavior that can be invoked selectively based on model parameter values
Keywords :
bipolar transistors; semiconductor device models; Early effect; SPICE Gummel-Poon model; VBIC95; avalanche multiplication; inter-company model; oxide parasitics; quasi-saturation; substrate parasitics; temperature behavior; vertical bipolar junction transistor; Capacitance; Identity-based encryption; Knee; Linear approximation; Noise measurement; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
