Design considerations in the development of silicon power rectifiers

The techniques used in the design and preparation of silicon rectifier diodes intended for use in medium- and high-power conversion equipment are discussed. It is shown that the designer has a certain degree of freedom, but that there are likely patterns for the configuration of future rectifier structures. The fact that a large part of the problem springs from thermal considerations is stressed. No attempt is made to deal with the physics of semiconductor behaviour or p-n junction theory, as this has been adequately dealt with elsewhere.