Title :
A Si 1.8 GHz RLC filter with tunable center frequency and quality factor
Author :
Pipilos, Spyros ; Tsividis, Yannis P. ; Fenk, Josef ; Papananos, Yannis
Author_Institution :
Div. of Comput. Sci., Nat. Tech. Univ. of Athens, Greece
fDate :
10/1/1996 12:00:00 AM
Abstract :
A second-order active bandpass filter using integrated inductors was implemented in Si bipolar technology. The filter uses special techniques to make the quality factor and the center frequency tunable. For a nominal center frequency of 1.8 GHz and a quality factor of 35, the filter has 1 dB compression dynamic range of 40 dB, and draws 8.7 mA from a 2.8 V supply
Keywords :
Q-factor; UHF filters; UHF integrated circuits; active filters; band-pass filters; bipolar analogue integrated circuits; circuit tuning; elemental semiconductors; inductors; silicon; 1.8 GHz; 2.8 V; 8.7 mA; RLC filter; Si; bipolar technology; compression dynamic range; integrated inductors; second-order active bandpass filter; tunable center frequency; tunable quality factor; Active inductors; Band pass filters; Circuits; Dynamic range; Frequency; Parasitic capacitance; Power dissipation; Power harmonic filters; Q factor; Tuning;
Journal_Title :
Solid-State Circuits, IEEE Journal of
