• DocumentCode
    1398077
  • Title

    The maximum voltage, current and power ratings of junction transistors

  • Author

    Hilbourne, R.A. ; Jones, D.D.

  • Author_Institution
    General Electric Company, Limited, Research Laboratries, Wembley, UK
  • Volume
    106
  • Issue
    17
  • fYear
    1959
  • fDate
    5/1/1959 12:00:00 AM
  • Firstpage
    998
  • Abstract
    The paper discusses the properties of a junction transistor which determine the limits of the three basic ratings, namely the maximum collector voltage, collector current and power dissipation, and describes methods of measurement. The effects of the limitations on the various circuit configurations are also discussed. The maximum value of both the direct and alternating voltages that may be applied to a transistor are dependent upon the variation of the characteristics with voltage. The most important of these factors are surface leakage, avalanche multiplication and collector/ emitter punch-through. The last is an absolute limitation whereas the first two result in a variation of the current gain and output impedance. The effects of these variations are very dependent upon the circuit arrangement and the possible parameter tolerances. The collector leakage current can also result in thermal instability. In general the important value of the leakage current, from the circuit-performance aspect, is that at high temperature. However, to simplify measuring and for life considerations, a low-temperature test may be more suitable. The maximum current rating is normally determined by the decrease in current gain at high emitter currents. Again this limitation is dependent upon the circuit arrangement and it is not possible to set an absolute limit. For linear-amplifier applications the variation of current gain with emitter current should be low, whereas, in switching applications, only the gain at high current is of importance. The power dissipation rating of a transistor is basically determined by the effect of a high internal temperature on its life. However, a convenient method of expressing the rating, as a function of ambient temperature, is by means of a maximum junction temperature and a thermal resistance. Since the total thermal resistance is dependent upon the mounting arrangements, the user must consider both the electrical and thermal properties of any trans- - istor circuit. The transient power rating of a transistor is also of importance in many switching circuits.
  • Keywords
    transistors;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEE - Part B: Electronic and Communication Engineering
  • Publisher
    iet
  • ISSN
    0369-8890
  • Type

    jour

  • DOI
    10.1049/pi-b-2.1959.0183
  • Filename
    5244143