DocumentCode
1398150
Title
High and Low Light CMOS Imager Employing Wide Dynamic Range Expansion and Low Noise Readout
Author
Dattner, Yonathan ; Yadid-Pecht, Orly
Author_Institution
Dept. of Electr. Eng., Univ. of Calgary, Calgary, AB, Canada
Volume
12
Issue
6
fYear
2012
fDate
6/1/2012 12:00:00 AM
Firstpage
2172
Lastpage
2179
Abstract
A high and low light imager (HALLI) developed in a CMOS process is presented. The HALLI utilizes a single column parallel partitioned pixel amplifier with variable topology for the detection of both high and low light levels in the same frame. For high light level detection, a wide dynamic range algorithm is utilized in which multiple resets via real-time feedback are employed. Each pixel in the field of view is independent and can automatically set its exposure time according to its illumination. For low light level detection, two noise reduction techniques are employed, active reset and active column sensor readout technique. Due to the commonalities in the high and low light level readout techniques, and the fact that they occur in staggered instances of time, a single partitioned pixel amplifier which can be configured in various modes of operation is used. The advantages of using a single column parallel partitioned pixel amplifier are simplicity in the analog readout path, reduced chip size, and lower power consumption than using individual dedicated blocks for each technique. The CMOS imager was designed and fabricated in a mixed signal 0.18 μm CMOS technology. System architecture, operation and results are presented.
Keywords
CMOS image sensors; amplifiers; readout electronics; signal denoising; HALLI; active column sensor readout technique; active reset sensor readout technique; analog readout path; dynamic range algorithm; high light CMOS imager; high light level readout techniques; low light CMOS imager; low light level detection; low light level readout techniques; mixed signal CMOS technology; noise reduction techniques; power consumption; real-time feedback; single column parallel partitioned pixel amplifier; size 0.18 mum; CMOS integrated circuits; Dynamic range; Noise; Random access memory; Sensors; Threshold voltage; Transistors; Active column sensor; CMOS imagers; active reset; column parallel architecture; low light level detection; multiple reset; rolling shutter; wide dynamic range;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2011.2179290
Filename
6104091
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