DocumentCode :
1398176
Title :
Germanium and silicon
Author :
Scott, T.R.
Volume :
106
Issue :
17
fYear :
1959
fDate :
5/1/1959 12:00:00 AM
Firstpage :
843
Lastpage :
846
Keywords :
semiconductors;
fLanguage :
English
Journal_Title :
Proceedings of the IEE - Part B: Electronic and Communication Engineering
Publisher :
iet
ISSN :
0369-8890
Type :
jour
DOI :
10.1049/pi-b-2.1959.0155
Filename :
5244159
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1398176
