25-Gb/s Direct Modulation of Implant Confined Holey Vertical-Cavity Surface-Emitting Lasers

Author

Chen, Chen ; Tian, Zhaobing ; Choquette, Kent D. ; Plant, David V.

Author_Institution

Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada

Volume

22

Issue

7

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

465

Lastpage

467

Abstract

A 25-Gb/s direct modulation of an 850-nm implant-confined holey vertical-cavity surface-emitting laser (VCSEL) is demonstrated with a low operation current density of 7.4 KA/cm² . The high-speed performance arises from cavity designs that are achieved using standard fabrication and epitaxial materials. The etched holey structure is incorporated into the top mirror of the VCSEL to tailor the size of the optical cavity independent from that of the electrical current aperture, enabling us to achieve high-speed modulation and low operation current density simultaneously.

Keywords

current density; high-speed optical techniques; holey fibres; optical modulation; surface emitting lasers; VCSEL; bit rate 25 Gbit/s; cavity designs; direct modulation; epitaxial materials; etched holey structure; high-speed performance; implant confined holey; low operation current density; optical cavity size; vertical-cavity surface-emitting lasers; wavelength 850 nm; High-speed modulation; optical interconnects; semiconductor lasers; vertical-cavity surface-emitting lasers ( VCSELs );

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2040990

Filename

5401084