Harmonic and intermodulation performance of analogue CMOS circuits owing to mobility reduction

The current-voltage characteristic of a MOSFET operating in the saturation region and including the effect of surface-channel mobility reduction is modelled by a third-order polynomial expression. Using this expression, a general expression is obtained for the harmonics and intermodulation performance of a MOSFET operating in saturation and excited by a multi-sinusoidal gate-to-source voltage. Using this expression, the second-harmonic and the third-harmonic distortion performance of a linear voltage-to-current convertor proposed recently has been calculated. The results obtained are compared with previously published results