Statistical and numerical method for MOSFET integrated-circuit sensitivity simulation using SPICE

Author

Wong, W.W. ; Winton, R.S. ; Liou, J.J.

Author_Institution

Dept. of Electr. Eng., Univ., of Central Florida, Orlando, FL, USA

Volume

138

Issue

1

fYear

1991

fDate

2/1/1991 12:00:00 AM

Firstpage

77

Lastpage

82

Abstract

Circuit sensitivity analysis helps a circuit designer to determine which transistors in a circuit are most influential on its performance and how variations of the device and process parameters affect the circuit output responses. The authors present a systematic approach for analysis of metal-oxide-semiconductor field effect transistor (MOSFET) integrated circuit DC performance as a function of channel length and width variations. The method, which involves an algorithm based on the Tellegen theorem and a database that contains statistical information on MOSFET process parameters, is implemented in the widely used SPICE2 circuit simulator. Sensitivity simulation of a MOSFET operational amplifier is included to illustrate the usefulness of the method

Keywords

MOS integrated circuits; circuit analysis computing; numerical methods; sensitivity analysis; statistical analysis; DC performance; MOSFET integrated-circuit; MOSFET operational amplifier; MOSFET process parameters; SPICE; SPICE2 circuit simulator; Tellegen theorem; channel length; channel width variations; database; monolithic IC; numerical method; sensitivity analysis; sensitivity simulation; statistical information;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings G

Publisher

iet

ISSN

0956-3768

Type

jour

Filename

87815