Title :
A charge-based model for short-channel MOS transistor capacitances
Author :
Gharabagi, Roobik ; El-Nokali, Mahmoud A.
Author_Institution :
Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
A model that conserves charge, is valid in the strong inversion regime, and is based on the quasi-static approximation is presented. Major second-order effects such as carrier velocity saturation, mobility degradation, and channel-length modulation are included in the derivation of current and charges. The theoretical predictions of the model are compared to both experimental and numerically simulated data and are found to be in good agreement over a wide range of gate and drain voltages and to confirm many properties that have been observed or predicted
Keywords :
capacitance; carrier mobility; insulated gate field effect transistors; semiconductor device models; capacitance; carrier velocity saturation; channel-length modulation; charge-based model; mobility degradation; numerical simulation; quasi-static approximation; short-channel MOS transistor; strong inversion regime; Capacitance; Circuit simulation; Degradation; Helium; MOSFETs; Measurement techniques; Numerical simulation; Predictive models; Semiconductor device modeling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
