Title :
Low-frequency noise in GaAs MESFETs related to backgating effects
Author :
Birbas, A.N. ; Brunn, B. ; van Rheenen, A.D. ; Gopinath, A. ; Chen, C.L. ; Smith, F.
Author_Institution :
Minnesota Univ., Minneapolis, MN, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
The influence of the backgating effect on low-frequency noise in GaAs MESFETs grown by molecular beam epitaxy is investigated. The low-frequency noise is of the 1/f type superimposed on generation-recombination noise. The backgating effect, although it reduces the current, increases current fluctuations and, hence, noise. Furthermore, it is shown that the incorporation of a low-temperature grown GaAs buffer, by MBE, significantly reduces the sensitivity of the noise level of the device to backgate bias
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 1/f type; GaAs; MBE; MESFETs; backgating effects; buffer; current fluctuations; generation-recombination noise; low-frequency noise; molecular beam epitaxy;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
