Title :
Development of a Megahertz High-Voltage Switching Pulse Modulator Using a SiC-JFET for an Induction Synchrotron
Author :
Ise, Keiichi ; Tanaka, Hiroshi ; Takaki, Koichi ; Wake, Masayoshi ; Okamura, Katsuya ; Takayama, Ken ; Jiang, Weihua
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Iwate Univ., Morioka, Japan
Abstract :
This paper evaluates the capability of a silicon carbide junction field-effect transistor for an induction synchrotron. The device was operated with a repetition rate of 1 MHz, a drain-source voltage of 1 kV, and a drain current of 50 A in burst mode. Based on the results, the feasibility of continuous-mode operation from the point of view of maximum junction temperature is evaluated. If the total thermal resistance is smaller than 0.7°C/W, the device has potential to be applied in an induction synchrotron.
Keywords :
driver circuits; junction gate field effect transistors; pulsed power supplies; silicon compounds; switching; synchrotrons; SiC-JFET; drain current; drain-source voltage; induction synchrotron; megahertz high-voltage; silicon carbide junction field-effect transistor; switching pulse modulator; Driver circuits; junction field-effect transistors (JFETs); pulsed power supplies; silicon carbide (SiC); synchrotrons;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2010.2090671
