Development of a Megahertz High-Voltage Switching Pulse Modulator Using a SiC-JFET for an Induction Synchrotron

Author

Ise, Keiichi ; Tanaka, Hiroshi ; Takaki, Koichi ; Wake, Masayoshi ; Okamura, Katsuya ; Takayama, Ken ; Jiang, Weihua

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Iwate Univ., Morioka, Japan

Volume

39

Issue

2

fYear

2011

Firstpage

730

Lastpage

736

Abstract

This paper evaluates the capability of a silicon carbide junction field-effect transistor for an induction synchrotron. The device was operated with a repetition rate of 1 MHz, a drain-source voltage of 1 kV, and a drain current of 50 A in burst mode. Based on the results, the feasibility of continuous-mode operation from the point of view of maximum junction temperature is evaluated. If the total thermal resistance is smaller than 0.7°C/W, the device has potential to be applied in an induction synchrotron.

Keywords

driver circuits; junction gate field effect transistors; pulsed power supplies; silicon compounds; switching; synchrotrons; SiC-JFET; drain current; drain-source voltage; induction synchrotron; megahertz high-voltage; silicon carbide junction field-effect transistor; switching pulse modulator; Driver circuits; junction field-effect transistors (JFETs); pulsed power supplies; silicon carbide (SiC); synchrotrons;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2010.2090671

Filename

5661855