DocumentCode
1399193
Title
Symbolic transfer functions for MESFET small-signal parameter extraction
Author
Fusco, V.F.
Author_Institution
Dept. of Electr. Eng., Queen´´s Univ. of Belfast, UK
Volume
138
Issue
2
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
217
Lastpage
221
Abstract
The author describes a technique whereby directed graphs can be used to represent the interactions within an active microwave device, described by means of a lumped equivalent circuit. Analytical transfer functions representing the two-port scattering parameter matrix are evaluated. These are then used in a robust, automatic small-signal parameter estimation scheme. The resulting device equivalent circuits are of minimal complexity and provide excellent fits to measured S -parameter data over a broad frequency range. Results are presented for two commercially available MESFET devices, the Plessey P35-1140 chip and the NE71000 chip
Keywords
S-matrix theory; S-parameters; Schottky gate field effect transistors; directed graphs; equivalent circuits; parameter estimation; solid-state microwave devices; transfer functions; MESFET; NE71000 chip; Plessey P35-1140 chip; S-parameter data; active microwave device; directed graphs; lumped equivalent circuit; parameter estimation scheme; small-signal parameter extraction; symbolic transfer functions; two-port scattering parameter matrix;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
87843
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