The influence of tilted source-drain implants on high-field effects in submicrometer MOSFETs

Author

Baker, Frank K. ; Pfiester, James R.

Author_Institution

Motorola Inc., Austin, TX, USA

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2119

Lastpage

2124

Abstract

Asymmetries in MOSFET high-field effects, such as impact ionization and bipolar snapback, are used to examine the influence of tilted source-drain implants on device reliability. Several process variables, including source-drain implant conditions and anneal time, are varied to determine how they affect these asymmetries. Using two-dimensional process and devices simulations to explain the physical origins of these effects, the lightly doped drain (LDD) structure is shown to offer some immunity to tilt-angle-induced reliability problems. These results are used to suggest guidelines for the design of the LDD structure

Keywords

high field effects; insulated gate field effect transistors; integrated circuit technology; ion implantation; semiconductor device models; semiconductor technology; 2D device simulation; 2D process simulation; LDD structure; anneal time; bipolar snapback; design guidelines; device reliability; high field effects asymmetries; high-field effects; impact ionization; lightly doped drain; physical origins; process variables; proximity effects; source-drain implant conditions; submicron MOSFETs; tilt-angle-induced reliability problems; tilted source-drain implants; Annealing; CMOS process; Degradation; Electric breakdown; Electrodes; Fabrication; Guidelines; Impact ionization; Implants; MOSFETs;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8785

Filename

8785