High output power single longitudinal mode graded index separate confinement multiple quantum well InGaAs/InP distributed feedback (GRIN SCH MQW DFB) lasers

Author

Tanbun-Ek, T. ; Logan, R.A. ; Temkin, H. ; Olsson, N.A. ; Sergent, A.M. ; Wecht, K.W.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

2

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

453

Lastpage

455

Abstract

A high continuous-wave (CW) output and high quantum efficiency of 1.5 mu m-wavelength InGaAs/InP graded-index separate-confinement multiple-quantum-well DFB lasers were demonstrated. A threshold current of 45 mA with a maximum output power close to 100 mW and a quantum efficiency of 0.33 mW/mA was obtained. Single-frequency light output with power as high as 16 dBm (40 mW) was launched into a single-mode fiber.<>

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gradient index optics; indium compounds; laser modes; semiconductor junction lasers; semiconductor quantum wells; 1.5 micron; 100 mW; 45 mA; III-V semiconductors; InGaAs-InP distributed feedback lasers; continuous wave; graded index separate confinement multiple quantum well lasers; high output power single longitudinal mode lasers; quantum efficiency; single frequency light output; single-mode fiber; threshold current; Distributed feedback devices; Fiber lasers; Gratings; Heat treatment; Laser modes; Potential well; Power generation; Power lasers; Quantum well lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.56621

Filename

56621