DocumentCode
1399497
Title
Electrical characteristics of magnetic memory cells comprising magnetic tunnel junctions and GaAs diodes
Author
Boeve, H. ; Sousa, R.C. ; Freitas, P.P. ; De Boeck, J. ; Borghs, G.
Author_Institution
IMEC, Leuven, Belgium
Volume
36
Issue
21
fYear
2000
fDate
10/12/2000 12:00:00 AM
Firstpage
1782
Lastpage
1783
Abstract
Magnetic tunnel junctions have been the subject of study for use in nonvolatile magnetic memories. To cancel leakage paths in the memory array, a semiconductor switch is integrated per cell. Successful integration with GaAs diodes, dominating the cell performance, is described. Good resistance matching between both elements is essential to optimise the output characteristics. i.e. the absolute voltage or current difference between the two magnetic states
Keywords
III-V semiconductors; arrays; gallium arsenide; magnetic storage; magnetoresistive devices; random-access storage; semiconductor diodes; semiconductor switches; tunnelling; GaAs; GaAs diodes; electrical characteristics; leakage paths; magnetic memory cells; magnetic tunnel junctions; memory array; nonvolatile magnetic memories; output characteristics; resistance matching; semiconductor switch;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20001242
Filename
878565
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