The mode control of asymmetric Fabry-Perot optical modulators with multiple quantum wells

Author

Wu, Ronghan ; Chen, Zhibiao ; Chen, HongDa ; Gao, Wenzhi ; Zhao, Jun

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

Volume

33

Issue

11

fYear

1997

fDate

11/1/1997 12:00:00 AM

Firstpage

2071

Lastpage

2075

Abstract

The asymmetric Fabry-Perot (ASFP) mode position with the thickness of different index coating layer is calculated. The reason for the blue shift of the ASFP mode with the increasing thickness of low index coating layer is analyzed and this phenomenon is observed in experiments. With the wet-etching method, the ASFP mode can be tuned to the desired wavelength and thus the deviation of growth can be compensated. This method is used to improve the contrast ratio of modulators. With the ASFP mode located at different positions relative to the unbiased e-hh peak, different modulation characteristics are demonstrated

Keywords

compensation; electro-optical modulation; optical films; reflectivity; refractive index; semiconductor quantum wells; spectral line shift; symmetry; tuning; MQW modulators; asymmetric Fabry-Perot mode position; asymmetric Fabry-Perot optical modulators; contrast ratio; desired wavelength; electro optical modulators; index coating layer thickness; low index coating layer; mode control; modulation characteristics; multiple quantum wells; tuned; unbiased e-hh peak; wet-etching method; Chromium; Coatings; Etching; Fabry-Perot; Gallium arsenide; Optical control; Optical modulation; Position measurement; Quantum well devices; Reflectivity;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.641322

Filename

641322