Title :
The mode control of asymmetric Fabry-Perot optical modulators with multiple quantum wells
Author :
Wu, Ronghan ; Chen, Zhibiao ; Chen, HongDa ; Gao, Wenzhi ; Zhao, Jun
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
fDate :
11/1/1997 12:00:00 AM
Abstract :
The asymmetric Fabry-Perot (ASFP) mode position with the thickness of different index coating layer is calculated. The reason for the blue shift of the ASFP mode with the increasing thickness of low index coating layer is analyzed and this phenomenon is observed in experiments. With the wet-etching method, the ASFP mode can be tuned to the desired wavelength and thus the deviation of growth can be compensated. This method is used to improve the contrast ratio of modulators. With the ASFP mode located at different positions relative to the unbiased e-hh peak, different modulation characteristics are demonstrated
Keywords :
compensation; electro-optical modulation; optical films; reflectivity; refractive index; semiconductor quantum wells; spectral line shift; symmetry; tuning; MQW modulators; asymmetric Fabry-Perot mode position; asymmetric Fabry-Perot optical modulators; contrast ratio; desired wavelength; electro optical modulators; index coating layer thickness; low index coating layer; mode control; modulation characteristics; multiple quantum wells; tuned; unbiased e-hh peak; wet-etching method; Chromium; Coatings; Etching; Fabry-Perot; Gallium arsenide; Optical control; Optical modulation; Position measurement; Quantum well devices; Reflectivity;
Journal_Title :
Quantum Electronics, IEEE Journal of
